Temperature compensation layer planarization method for temperature compensation type acoustic surface wave device

Temperature compensation layer planarization method for temperature compensation type acoustic surface wave device

The invention discloses a temperature compensation layer planarization method for a temperature compensation type acoustic surface wave device. The method comprises the steps of measuring a height difference between silicon dioxide on a metal finger strip subjected to temperature compensation layer...

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Hauptverfasser: LENG JUNLIN, DONG JIAHE
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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DONG JIAHE
description The invention discloses a temperature compensation layer planarization method for a temperature compensation type acoustic surface wave device. The method comprises the steps of measuring a height difference between silicon dioxide on a metal finger strip subjected to temperature compensation layer coating and silicon dioxide on a metal finger web; coating a temperature compensation layer with dryetching-resistant photoresist; removing the photoresist, until the photoresist on the silicon dioxide on the metal finger strip is completely removed; calculating the thickness of the photoresist onthe silicon dioxide on the metal finger web; based on the thickness of the photoresist on the silicon dioxide on the metal finger web, selecting an etching selection ratio to perform dry etching; removing all the photoresist by adopting a dry photoresist removal process; measuring a thickness deviation of the temperature compensation layer; and importing the thickness deviation to an argon ion selectivity frequency modulat
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Temperature compensation layer planarization method for temperature compensation type acoustic surface wave device
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