Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs
TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of...
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Veröffentlicht in: | Journal of applied physics 1988-09, Vol.64 (5), p.2519-2522 |
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Format: | Artikel |
Sprache: | eng |
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