Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs

TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 1988-09, Vol.64 (5), p.2519-2522
Hauptverfasser: WHIPPLE, G. H, THOMPSON, M. G, KULKARNI, A. K
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!