Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs

TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 1988-09, Vol.64 (5), p.2519-2522
Hauptverfasser: WHIPPLE, G. H, THOMPSON, M. G, KULKARNI, A. K
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2522
container_issue 5
container_start_page 2519
container_title Journal of applied physics
container_volume 64
creator WHIPPLE, G. H
THOMPSON, M. G
KULKARNI, A. K
description TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.
doi_str_mv 10.1063/1.341635
format Article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_341635</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7317541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</originalsourceid><addsrcrecordid>eNo9kEFLAzEQhYMoWKvgT8jBg5etmc1mkxxLqVUoeGg9L2k2Y1fXzZKkh_57Uyo9DcP73jDvEfIIbAas5i8w4xXUXFyRCTClCykEuyYTxkoolJb6ltzF-M0YgOJ6QvwS0dlEPVIzDM703fBF_UDT3lHXZyV01vRZa2lM4WDTIeR1DH50IXUunowBizgeUnLBtXRrNl1JN3bvU_o5UuuHZGyKNHm6MvN4T27Q9NE9_M8p-Xxdbhdvxfpj9b6YrwtbijoVWuTn60pjKbFFJRiTyiqjlUYBDloopa5zGpYRq93OsWpXW1AokZfIBZ-S5_NdG3yMwWEzhu7XhGMDrDkV1UBzLiqjT2d0NDFnxWAG28ULLzlIUQH_A9pKZ4c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</title><source>AIP Digital Archive</source><creator>WHIPPLE, G. H ; THOMPSON, M. G ; KULKARNI, A. K</creator><creatorcontrib>WHIPPLE, G. H ; THOMPSON, M. G ; KULKARNI, A. K</creatorcontrib><description>TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.341635</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surface double layers, schottky barriers, and work functions</subject><ispartof>Journal of applied physics, 1988-09, Vol.64 (5), p.2519-2522</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</citedby><cites>FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7317541$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WHIPPLE, G. H</creatorcontrib><creatorcontrib>THOMPSON, M. G</creatorcontrib><creatorcontrib>KULKARNI, A. K</creatorcontrib><title>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</title><title>Journal of applied physics</title><description>TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surface double layers, schottky barriers, and work functions</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLAzEQhYMoWKvgT8jBg5etmc1mkxxLqVUoeGg9L2k2Y1fXzZKkh_57Uyo9DcP73jDvEfIIbAas5i8w4xXUXFyRCTClCykEuyYTxkoolJb6ltzF-M0YgOJ6QvwS0dlEPVIzDM703fBF_UDT3lHXZyV01vRZa2lM4WDTIeR1DH50IXUunowBizgeUnLBtXRrNl1JN3bvU_o5UuuHZGyKNHm6MvN4T27Q9NE9_M8p-Xxdbhdvxfpj9b6YrwtbijoVWuTn60pjKbFFJRiTyiqjlUYBDloopa5zGpYRq93OsWpXW1AokZfIBZ-S5_NdG3yMwWEzhu7XhGMDrDkV1UBzLiqjT2d0NDFnxWAG28ULLzlIUQH_A9pKZ4c</recordid><startdate>19880901</startdate><enddate>19880901</enddate><creator>WHIPPLE, G. H</creator><creator>THOMPSON, M. G</creator><creator>KULKARNI, A. K</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19880901</creationdate><title>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</title><author>WHIPPLE, G. H ; THOMPSON, M. G ; KULKARNI, A. K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surface double layers, schottky barriers, and work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WHIPPLE, G. H</creatorcontrib><creatorcontrib>THOMPSON, M. G</creatorcontrib><creatorcontrib>KULKARNI, A. K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WHIPPLE, G. H</au><au>THOMPSON, M. G</au><au>KULKARNI, A. K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</atitle><jtitle>Journal of applied physics</jtitle><date>1988-09-01</date><risdate>1988</risdate><volume>64</volume><issue>5</issue><spage>2519</spage><epage>2522</epage><pages>2519-2522</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.341635</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 1988-09, Vol.64 (5), p.2519-2522
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_341635
source AIP Digital Archive
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface double layers, schottky barriers, and work functions
title Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T20%3A14%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20annealing%20on%20the%20electrical%20and%20structural%20properties%20of%20rf-sputtered%20TaSi2%20Schottky%20contacts%20to%20GaAs&rft.jtitle=Journal%20of%20applied%20physics&rft.au=WHIPPLE,%20G.%20H&rft.date=1988-09-01&rft.volume=64&rft.issue=5&rft.spage=2519&rft.epage=2522&rft.pages=2519-2522&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.341635&rft_dat=%3Cpascalfrancis_cross%3E7317541%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true