Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs
TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of...
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Veröffentlicht in: | Journal of applied physics 1988-09, Vol.64 (5), p.2519-2522 |
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creator | WHIPPLE, G. H THOMPSON, M. G KULKARNI, A. K |
description | TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film. |
doi_str_mv | 10.1063/1.341635 |
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fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_341635</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7317541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</originalsourceid><addsrcrecordid>eNo9kEFLAzEQhYMoWKvgT8jBg5etmc1mkxxLqVUoeGg9L2k2Y1fXzZKkh_57Uyo9DcP73jDvEfIIbAas5i8w4xXUXFyRCTClCykEuyYTxkoolJb6ltzF-M0YgOJ6QvwS0dlEPVIzDM703fBF_UDT3lHXZyV01vRZa2lM4WDTIeR1DH50IXUunowBizgeUnLBtXRrNl1JN3bvU_o5UuuHZGyKNHm6MvN4T27Q9NE9_M8p-Xxdbhdvxfpj9b6YrwtbijoVWuTn60pjKbFFJRiTyiqjlUYBDloopa5zGpYRq93OsWpXW1AokZfIBZ-S5_NdG3yMwWEzhu7XhGMDrDkV1UBzLiqjT2d0NDFnxWAG28ULLzlIUQH_A9pKZ4c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</title><source>AIP Digital Archive</source><creator>WHIPPLE, G. H ; THOMPSON, M. G ; KULKARNI, A. K</creator><creatorcontrib>WHIPPLE, G. H ; THOMPSON, M. G ; KULKARNI, A. K</creatorcontrib><description>TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.341635</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surface double layers, schottky barriers, and work functions</subject><ispartof>Journal of applied physics, 1988-09, Vol.64 (5), p.2519-2522</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</citedby><cites>FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7317541$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WHIPPLE, G. H</creatorcontrib><creatorcontrib>THOMPSON, M. G</creatorcontrib><creatorcontrib>KULKARNI, A. K</creatorcontrib><title>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</title><title>Journal of applied physics</title><description>TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surface double layers, schottky barriers, and work functions</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLAzEQhYMoWKvgT8jBg5etmc1mkxxLqVUoeGg9L2k2Y1fXzZKkh_57Uyo9DcP73jDvEfIIbAas5i8w4xXUXFyRCTClCykEuyYTxkoolJb6ltzF-M0YgOJ6QvwS0dlEPVIzDM703fBF_UDT3lHXZyV01vRZa2lM4WDTIeR1DH50IXUunowBizgeUnLBtXRrNl1JN3bvU_o5UuuHZGyKNHm6MvN4T27Q9NE9_M8p-Xxdbhdvxfpj9b6YrwtbijoVWuTn60pjKbFFJRiTyiqjlUYBDloopa5zGpYRq93OsWpXW1AokZfIBZ-S5_NdG3yMwWEzhu7XhGMDrDkV1UBzLiqjT2d0NDFnxWAG28ULLzlIUQH_A9pKZ4c</recordid><startdate>19880901</startdate><enddate>19880901</enddate><creator>WHIPPLE, G. H</creator><creator>THOMPSON, M. G</creator><creator>KULKARNI, A. K</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19880901</creationdate><title>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</title><author>WHIPPLE, G. H ; THOMPSON, M. G ; KULKARNI, A. K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-95108649f27fdf850078c8a989f51e1d12796979049fc9ebe04b6c18f7f32f353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surface double layers, schottky barriers, and work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WHIPPLE, G. H</creatorcontrib><creatorcontrib>THOMPSON, M. G</creatorcontrib><creatorcontrib>KULKARNI, A. K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WHIPPLE, G. H</au><au>THOMPSON, M. G</au><au>KULKARNI, A. K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs</atitle><jtitle>Journal of applied physics</jtitle><date>1988-09-01</date><risdate>1988</risdate><volume>64</volume><issue>5</issue><spage>2519</spage><epage>2522</epage><pages>2519-2522</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.341635</doi><tpages>4</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions |
title | Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs |
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