Electron tunneling from quantum dots characterized by deep level transient spectroscopy
Electron tunneling from In As ∕ Ga As quantum dots has been studied by deep level transient spectroscopy (DLTS). Comparing DLTS data with theory, we demonstrate how the results can be interpreted for situations where the emission mechanism is pure tunneling. An illusory anomalous tunneling dependenc...
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Veröffentlicht in: | Applied physics letters 2007-09, Vol.91 (13), p.133117-133117-3 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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