Electron tunneling from quantum dots characterized by deep level transient spectroscopy

Electron tunneling from In As ∕ Ga As quantum dots has been studied by deep level transient spectroscopy (DLTS). Comparing DLTS data with theory, we demonstrate how the results can be interpreted for situations where the emission mechanism is pure tunneling. An illusory anomalous tunneling dependenc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2007-09, Vol.91 (13), p.133117-133117-3
Hauptverfasser: Engström, O., Kaniewska, M., Kaczmarczyk, M., Jung, W.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!