Electron tunneling from quantum dots characterized by deep level transient spectroscopy

Electron tunneling from quantum dots characterized by deep level transient spectroscopy

Electron tunneling from In As ∕ Ga As quantum dots has been studied by deep level transient spectroscopy (DLTS). Comparing DLTS data with theory, we demonstrate how the results can be interpreted for situations where the emission mechanism is pure tunneling. An illusory anomalous tunneling dependenc...

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Veröffentlicht in:Applied physics letters 2007-09, Vol.91 (13), p.133117-133117-3
Hauptverfasser: Engström, O., Kaniewska, M., Kaczmarczyk, M., Jung, W.
Format: Artikel
Sprache:eng
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Zusammenfassung:Electron tunneling from In As ∕ Ga As quantum dots has been studied by deep level transient spectroscopy (DLTS). Comparing DLTS data with theory, we demonstrate how the results can be interpreted for situations where the emission mechanism is pure tunneling. An illusory anomalous tunneling dependence on electric field is resolved by taking into account the energy level distribution originating from size fluctuations in the quantum dot ensemble.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2790846