Rotational Auger depth profiling of a GaAs/AlGaAs multilayer structure
A superlattice sample consisting of 200 alternating 5 nm layers of GaAs and Al0.45Ga0.55As was analyzed to explore some of the factors affecting depth resolution in rotational depth profiling by AES, including coincidence of sample rotation and probe beam axes, stability of analysis position and pro...
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Veröffentlicht in: | Surface and interface analysis 1992-06, Vol.18 (6), p.381-386 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A superlattice sample consisting of 200 alternating 5 nm layers of GaAs and Al0.45Ga0.55As was analyzed to explore some of the factors affecting depth resolution in rotational depth profiling by AES, including coincidence of sample rotation and probe beam axes, stability of analysis position and probe beam current density. Because of the periodic nature of the layers involved, it was possible to detect very small (< 2 nm) changes in surface topography. A mathematical model is proposed which explains the unusual features observed in the AES profile. |
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ISSN: | 0142-2421 1096-9918 |
DOI: | 10.1002/sia.740180602 |