Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

We investigate negative bias temperature instability (NBTI) on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs) with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5...

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Veröffentlicht in:中国物理快报:英文版 2014-05 (5), p.191-194
1. Verfasser: 王洪娟 韩根全 刘艳 颜静 张春福 张进成 郝跃
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Sprache:eng
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Zusammenfassung:We investigate negative bias temperature instability (NBTI) on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs) with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm^-2. NBTI characterization is performed to investigate the linear transconductance (GM,lin) degradation and threshold voltage shift (△VTH) under NBT stress. Ge pMOSFETs with a lOyr lifetime at an operating voltage of -0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350℃ to 550℃, the degradation of NBTI characteristics, e.g., GM,lin loss, △VTH and an operating voltage for a lifetime of lOyr, is observed.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/5/058503