Silicon-Germanium (SiGe) IC devices and technology
The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline ap...
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| Format: | Elektronisch Video |
| Sprache: | English |
| Veröffentlicht: |
United States
IEEE
2005
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| Online-Zugang: | DE-92 DE-91 |
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| LEADER | 00000nam a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV047476953 | ||
| 003 | DE-604 | ||
| 005 | 20220217 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 210921s2005 xx a||| o|||| 00||| eng d | ||
| 020 | |a 9780780396517 |9 978-0-7803-9651-7 | ||
| 035 | |a (ZDB-37-ICG)EDP012 | ||
| 035 | |a (OCoLC)1269396977 | ||
| 035 | |a (DE-599)BVBBV047476953 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-92 | ||
| 082 | 0 | |a 621.38152 |2 23 | |
| 100 | 1 | |a Cressler, John D. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Silicon-Germanium (SiGe) IC devices and technology |c John D. Cressler |
| 264 | 1 | |a United States |b IEEE |c 2005 | |
| 300 | |a 1 Online-Resource (1 Videodatei, 60 Minuten) |b color illustrations | ||
| 336 | |b tdi |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 9, 2020) | ||
| 520 | |a The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline applications. SiGe HBT technology combines transistor performance competitive with III-V technologies such as GaAs and InP with the processing maturity, integration levels, yield, and cost commonly associated with conventional Si CMOS fabrication. First-generation SiGe HBTs can deliver: fT in excess of 50 GHz, fmax in excess of 70 GHz, minimum noise figure below 0.5 dB at 2.0 GHz, linearity efficiency (OIP3/Pdc) above 10, 1/f noise corner frequencies below 1 kHz, operation at cryogenic temperatures, excellent radiation hardness, as well as yield, reliability and cost comparable to Si. Aggressively-scaled SiGe HBTs can achieve greater than 200 GHz transistor-level performance, and thus are expected to enable Si-based solutions for >40 GB/sec data links and emerging RF, microwave, and even mm-wave systems | ||
| 650 | 4 | |a Silicon | |
| 650 | 4 | |a Germanium | |
| 655 | 7 | |0 (DE-588)4017102-4 |a Film |2 gnd-content | |
| 912 | |a ZDB-37-ICG | ||
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-032878514 | |
| 966 | e | |u https://ieeexplore.ieee.org/courses/details/EDP012 |l DE-92 |p ZDB-37-ICG |x Verlag |3 Volltext | |
| 966 | e | |u https://ieeexplore.ieee.org/courses/details/EDP012 |l DE-91 |p ZDB-37-ICG |x Verlag |3 Volltext | |
Datensatz im Suchindex
| DE-BY-TUM_katkey | 2583579 |
|---|---|
| _version_ | 1820865501977378816 |
| any_adam_object | |
| author | Cressler, John D. |
| author_facet | Cressler, John D. |
| author_role | aut |
| author_sort | Cressler, John D. |
| author_variant | j d c jd jdc |
| building | Verbundindex |
| bvnumber | BV047476953 |
| collection | ZDB-37-ICG |
| ctrlnum | (ZDB-37-ICG)EDP012 (OCoLC)1269396977 (DE-599)BVBBV047476953 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic Video |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02450nam a2200373zc 4500</leader><controlfield tag="001">BV047476953</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20220217 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">210921s2005 xx a||| o|||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780780396517</subfield><subfield code="9">978-0-7803-9651-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-37-ICG)EDP012</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1269396977</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV047476953</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-92</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Cressler, John D.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon-Germanium (SiGe) IC devices and technology</subfield><subfield code="c">John D. Cressler</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">United States</subfield><subfield code="b">IEEE</subfield><subfield code="c">2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Resource (1 Videodatei, 60 Minuten)</subfield><subfield code="b">color illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">tdi</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Description based on online resource; title from title screen (IEEE Xplore Digital Library, viewed November 9, 2020)</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline applications. SiGe HBT technology combines transistor performance competitive with III-V technologies such as GaAs and InP with the processing maturity, integration levels, yield, and cost commonly associated with conventional Si CMOS fabrication. First-generation SiGe HBTs can deliver: fT in excess of 50 GHz, fmax in excess of 70 GHz, minimum noise figure below 0.5 dB at 2.0 GHz, linearity efficiency (OIP3/Pdc) above 10, 1/f noise corner frequencies below 1 kHz, operation at cryogenic temperatures, excellent radiation hardness, as well as yield, reliability and cost comparable to Si. Aggressively-scaled SiGe HBTs can achieve greater than 200 GHz transistor-level performance, and thus are expected to enable Si-based solutions for >40 GB/sec data links and emerging RF, microwave, and even mm-wave systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Germanium</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4017102-4</subfield><subfield code="a">Film</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-37-ICG</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-032878514</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://ieeexplore.ieee.org/courses/details/EDP012</subfield><subfield code="l">DE-92</subfield><subfield code="p">ZDB-37-ICG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://ieeexplore.ieee.org/courses/details/EDP012</subfield><subfield code="l">DE-91</subfield><subfield code="p">ZDB-37-ICG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| genre | (DE-588)4017102-4 Film gnd-content |
| genre_facet | Film |
| id | DE-604.BV047476953 |
| illustrated | Illustrated |
| indexdate | 2024-12-24T08:56:34Z |
| institution | BVB |
| isbn | 9780780396517 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032878514 |
| oclc_num | 1269396977 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-92 |
| owner_facet | DE-91 DE-BY-TUM DE-92 |
| physical | 1 Online-Resource (1 Videodatei, 60 Minuten) color illustrations |
| psigel | ZDB-37-ICG |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | IEEE |
| record_format | marc |
| spellingShingle | Cressler, John D. Silicon-Germanium (SiGe) IC devices and technology Silicon Germanium |
| subject_GND | (DE-588)4017102-4 |
| title | Silicon-Germanium (SiGe) IC devices and technology |
| title_auth | Silicon-Germanium (SiGe) IC devices and technology |
| title_exact_search | Silicon-Germanium (SiGe) IC devices and technology |
| title_full | Silicon-Germanium (SiGe) IC devices and technology John D. Cressler |
| title_fullStr | Silicon-Germanium (SiGe) IC devices and technology John D. Cressler |
| title_full_unstemmed | Silicon-Germanium (SiGe) IC devices and technology John D. Cressler |
| title_short | Silicon-Germanium (SiGe) IC devices and technology |
| title_sort | silicon germanium sige ic devices and technology |
| topic | Silicon Germanium |
| topic_facet | Silicon Germanium Film |
| work_keys_str_mv | AT cresslerjohnd silicongermaniumsigeicdevicesandtechnology |