On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond
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| 245 | 1 | 0 | |a On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond |c vorgelegt von Andrej Rumiantsev |
| 264 | 1 | |c 2014 | |
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Datensatz im Suchindex
| _version_ | 1819740522363748352 |
|---|---|
| adam_text | ON-WAFER CALIBRATION TECHNIQUES ENABLING ACCURATE CHARACTERIZATION
OF HIGH-PERFORMANCE SILICON DEVICES AT THE MM-WAVE RANGE AND BEYOND 3
TABLE OF CONTENT
1 MOTIVATION 7
1.1 ADVANCES IN SILICON TECHNOLOGIES FOR MM-WAVE APPLICATIONS 7
1.2 CHALLENGES OF RF CHARACTERIZATION OF ADVANCED DEVICES 8
1.3 CONTRIBUTION OF THIS WORK 12
2 INTRODUCTION 15
2.1 S-PARAMETERS OF A LINEAR NETWORK 15
2.2 THEORY OF A UNIFORM WAVEGUIDE MODE 17
2.2.1 WAVEGUIDE VOLTAGE AND CURRENT 17
2.2.2 POWER 17
2.2.3 CHARACTERISTIC IMPEDANCE 18
2.2.4 EQUIVALENT CIRCUIT REPRESENTATION OF TRANSMISSION LINE 19
2.2.5 EFFECTIVE PERMITTIVITY AND MEASUREMENT OF CHARACTERISTIC IMPEDANCE
20
2.3 WAVEGUIDE CIRCUIT THEORY 20
2.3.1 TRAVELLING WAVE 21
2.3.2 PSEUDO-WAVES 22
2.3.3 SCATTERING AND PSEUDO-SCATTERING MATRICES 23
2.3.4 THE CASCADE MATRIX 23
2.3.5 CHANGE OF REFERENCE IMPEDANCE 24
2.3.6 TWO-PORT REFERENCE IMPEDANCE TRANSFORMATION
25
2.3.7 LOAD IMPEDANCE
25
2.4 S-PARAMETER MEASUREMENT 27
2.5 SYSTEMATIC MEASUREMENT ERRORS AND S-PARAMETER CALIBRATION 28
2.6 S-PARAMETER MEASUREMENTS AT THE WAFER-LEVEL 28
2.6.1 DESIGN OF MODERN WAFER PROBES 29
2.6.2 DUT CONTACT PADS AND BEOL PARASITICS 33
2.6.3 CALIBRATION STANDARDS 35
3 DEVELOPMENT OF CALIBRATION SOLUTIONS 39
3.1 REQUIREMENTS 39
3.2 CALIBRATION OF A TWO-PORT VNA 40
3.3 TRANSFER TMR SOLUTION 41
3.3.1 NOTES ON CALIBRATION REFERENCE IMPEDANCE 46
3.3.2 CALIBRATION WITH A THRU OF A FINITE LENGTH 47
3.3.3 NOTES ON THE PROBE TIP REFLECTION STANDARDS
47
3.4 VERIFICATION OF THE TRANSFER TMR 48
3.5 MULTIPORT CALIBRATION 49
3.6 CONCLUSION 51
4 DESIGN OF ON-WAFER CALIBRATION STANDARDS 53
4.1 DESIGN TRADEOFF 53
4.2 DESIGN OF RF CONTACT PAD AND DEVICE INTERFACE 55
4.3 LOCATION OF THE REFERENCE PLANE 57
4.4 CALIBRATION STANDARDS 59
4.4.1 THRU AND LINE 59
4.4.2 SHORT 61
4.4.3 LOAD 62
4.5 DE-EMBEDDING ELEMENTS 63
HTTP://D-NB.INFO/1050808088
4 TABLE OF CONTENT
4.5.1 PAD OPEN AND PAD SHORT 64
4.5.2 PROBE SHORT 64
4.5.3 COMPLETE OPEN AND COMPLETE SHORT 65
4.6 CALIBRATION STANDARDS AND DE-EMBEDDING ELEMENTS IMPLEMENTED IN THE
IHP BICMOS SIGE:C PROCESS 67
4.7 CALIBRATION STANDARDS IMPLEMENTED IN IBM RF CMOS 8SF
PROCESS 69
5 ELECTRICAL PROPERTIES OF CUSTOM STANDARDS 71
5.1 MULTILINE TRL AND TRANSFER TMR REQUIREMENTS 71
5.2 MEASUREMENT OF THE CHARACTERISTIC IMPEDANCE OF THE LINE 72
5.3 ESTABLISHING THE REFERENCE FOR THE CALIBRATION COMPARISON METHOD 73
5.3.1 NIST GAAS REFERENCE MATERIAL RM8130 74
5.3.2 COMMERCIAL ALUMINA SUBSTRATE AS THE REFERENCE 76
5.4 RESULTS OF MEASUREMENT OF THE CHARACTERISTIC IMPEDANCE OF THE LINE
79
5.4.1 IBM ADVANCED RF CMOS 8SF PROCESS 79
5.4.2 STMICROELECTRONICS BICMOS9MMW PROCESS 82
5.5 DEFINITION OF THE LOAD IMPEDANCE 84
5.5.1 MEASUREMENT METHOD 84
5.5.2 EM SIMULATION OF THE LOAD REACTANCE 86
5.5.3 TWO STEP DE-EMBEDDING FOR MEASUREMENT OF LOAD REACTANCE 87
5.6 CONCLUSION 88
6 VERIFICATION METHODS FOR ON-WAFER CALIBRATION 89
6.1 VERIFICATION OF THE MULTILINE TRL 89
6.2 QUANTITATIVE VERIFICATION OF THE TRANSFER TMR 91
6.3 QUALITATIVE VERIFICATION OF THE TRANSFER TMR 93
6.3.1 VERIFICATION OF THE REFLECT R
X
93
6.3.2 VERIFICATION FOR OPEN AND ATTENUATOR. 94
6.4 CONCLUSION 95
7 ADVANTAGES OF IN-SITU CALIBRATION 97
7.1 CHOOSING THE REFERENCE PROBE-TIP CALIBRATION METHOD FOR COMPARISON
97
7.2 MEASUREMENT SETUP 98
7.3 COLD S-PARAMETER RESULTS 99
7.4 FORWARD MODE S-PARAMETER RESULTS 102
7.4.1 Y-PARAMETERS 102
7.4.2 F
T
ANDF
MA
X 103
7.5 COMPARISON WITH A COMPACT MODEL 105
7.6 CONCLUSION 106
8 ADDRESSING ISSUES OF ON-WAFER STANDARDS 107
8.1 HOW TO HANDLE STANDARD PROPERTIES THAT CHANGE OVER TEMPERATURE 107
8.1.1 EXPERIMENT WITH COMMERCIAL STANDARDS AT CRYOGENIC TEMPERATURES 108
8.1.2 EXPERIMENT WITH COMMERCIAL STANDARDS AT HIGH TEMPERATURES 109
8.1.3 SENSITIVITY ANALYSIS OF OVER-TEMPERATURE PROBE-TIP CALIBRATION FOR
MULTILINE TRL,
TRANSFER TMR AND LRRM METHODS 110
8.2 IMPACT OF THE FABRICATION INACCURACY OF CUSTOM STANDARDS TO THE
ACCURACY OF DUT PARAMETER EXTRACTION ILL
8.3 CONCLUSION 113
9 SELECTED ASPECTS OF MEASUREMENT AND CALIBRATION ASSURANCE 115
9.1 OPTIMIZATION OF BOUNDARY CONDITIONS FOR COPLANAR STANDARDS 115
TABLE OF CONTENT 5
9.1.1 CPW TRANSMISSION LINE PARAMETERS 117
9.1.2 PROPERTIES OF LUMPED STANDARDS 119
9.2 IMPACT OF THE PROBE-TIP DESIGN 120
9.3 ESTIMATION OF CALIBRATION RESIDUAL ERRORS 123
9.4 CONCLUSION 124
10 CONCLUSION AND FURTHER RESEARCH 125
10.1 CONCLUSION 125
10.2 FURTHER RESEARCH 126
10.2.1 CALIBRATION OVER MULTIPLE TEMPERATURES 126
10.2.2 MULTIPORT CALIBRATION 127
10.2.3 SOLUTION FOR MULTIMODE PROPAGATION CONDITIONS 127
10.2.4 CROSSTALK 128
11 REFERENCES 129
12 ATTACHMENT TO CHAPTER 2 12-1
12.1 PAPER [32]: VNA CALIBRATION 12-I
13 ATTACHMENT TO CHAPTER 3 13-1
13.1 PAPER [50]: VERIFICATION OF THE WAFER-LEVEL LRM+ CALIBRATION
TECHNIQUE
FOR GAAS APPLICATIONS UP TO 110 GHZ 13-I
13.2 PAPER [52]: ADVANCED ON-WAFER MULTIPORT CALIBRATION METHODS FOR
MONO- AND MIXED-MODE DEVICE CHARACTERIZATION 13-VII
13.3 PAPER [54]: A ROBUST BROADBAND CALIBRATION METHOD FOR WAFER-LEVEL
CHARACTERIZATION OF MULTIPORT DEVICES 13-XIII
14 ATTACHMENT TO CHAPTER 5 14-1
14.1 PAPER [77]: APPLYING THE CALIBRATION COMPARISON TECHNIQUE FOR
VERIFICATION OF TRANSMISSION LINE STANDARDS ON SILICON UP TO 110 GHZ
14-I
14.2 PAPER [23]: CALIBRATION STANDARDS VERIFICATION PROCEDURE USING THE
CALIBRATION COMPARISON TECHNIQUE 14-IX
15 ATTACHMENT TO CHAPTER 6 15-1
15.1 PAPER [56]: COMPARISON OF ON-WAFER MULTILINE TRL AND LRM+
CALIBRATIONS FOR RF CMOS APPLICATIONS 15-I
16 ATTACHMENT TO CHAPTER 7 16-1
16.1 PAPER [64]: INFLUENCE OF PROBE TIP CALIBRATION ON MEASUREMENT
ACCURACY
OF SMALL-SIGNAL PARAMETERS OF ADVANCED BICMOS HBTS 16-I
16.2 PAPER [59] (INVITED TALK): STATE-OF-THE-ART AND FUTURE
PERSPECTIVES IN
CALIBRATION AND DE-EMBEDDING TECHNIQUES FOR CHARACTERIZATION OF
ADVANCED SIGE HBTS FEATURING SUB-THZ F
T
/FIVIAX 16-VII
17 ATTACHMENT TO CHAPTER 8 17-1
17.1 PAPER [88]: VERIFICATION OF WAFER-LEVEL CALIBRATION ACCURACY AT
CRYOGENIC
TEMPERATURES 17-I
17.2 PAPER [89]: VERIFICATION OF WAFER-LEVEL CALIBRATION ACCURACY AT
HIGH
TEMPERATURES 17-VII
17.3 PAPER [90]: SENSITIVITY ANALYSIS OF WAFER-LEVEL OVER-TEMPERATURE
RF
CALIBRATION 17-XIII
6 TABLE OF CONTENT
17.4 PAPER [93]: IMPACT OF IN-SITU TRL REFERENCE IMPEDANCE
DETERMINATION
ON PARAMETER EXTRACTION 17-XVII
18 ATTACHMENT TO CHAPTER 9 18-1
18.1 PAPER [109]: THE MODIFIED RIPPLE TEST FOR ON-WAFER S-PARAMETER
MEASUREMENTS 18-I
|
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| author_facet | Rumiantsev, Andrej |
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| dewey-search | 621.3 |
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Informatik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| indexdate | 2024-12-24T04:05:55Z |
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| language | English |
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| spellingShingle | Rumiantsev, Andrej On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond Wafer (DE-588)4294605-0 gnd BICMOS (DE-588)4234781-6 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| subject_GND | (DE-588)4294605-0 (DE-588)4234781-6 (DE-588)4179389-4 (DE-588)4113937-9 |
| title | On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond |
| title_auth | On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond |
| title_exact_search | On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond |
| title_full | On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond vorgelegt von Andrej Rumiantsev |
| title_fullStr | On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond vorgelegt von Andrej Rumiantsev |
| title_full_unstemmed | On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond vorgelegt von Andrej Rumiantsev |
| title_short | On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond |
| title_sort | on wafer calibration techniques enabling accurate characterization of high performance silicon devices at the mm wave range and beyond |
| topic | Wafer (DE-588)4294605-0 gnd BICMOS (DE-588)4234781-6 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| topic_facet | Wafer BICMOS Schaltungsentwurf Hochschulschrift |
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