Structural and microwave dielectric properties of LiZnSbO4 ceramcis for dielectric resonator antenna applications

New microwave dielectric ceramics of LiZnSbO4 were prepared by the reactive sintering method. Within the sintering temperature zone of 1350∘C–1385∘C, a single-phase LiZnSbO4 with an orthorhombic structure was identified by XRD refinement, which contains 10 molecular formula per unit cell (i.e., Z = 1 0 ). The relative density and average grain size had a main effect on ε r and Q × f value of the LiZnSbO4 ceramics, whereas the phase assemblage was responsible for its τ f . The 1375∘C-sintered LiZnSbO4 specimens owned comparable low ε r ∼ 6 . 5 , but ultra-high Q × f ∼ 7 4 , 5 0 0 GHz (nearly three times) compared to LiZnPO4 and LiZnVO4 ultra-high Q × f ∼ 7 4 , 5 0 0 GHz (nearly three times) compared to LiZnPO4 and LiZnVO4 manufactured, which showed a return loss as low as 37.4 dB, maximum gain of 5.7 dB and a fractional bandwidth of 3.9% (11.95–12.43 GHz).