High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process

High Speed 0.9 μm Lateral p-i-n Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process

Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.

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Bibliographische Detailangaben
Hauptverfasser: GIZIEWICZ, WOJCIECH P., FONSTAD, CLIFTON G., PRASAD, SHEILA
Format: Buchkapitel
Sprache:eng
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Zusammenfassung:Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.
DOI:10.1142/9789812702036_0015