P-105: Advanced Furnace-Growing Technology to Fabricate Nanowire Type In2O3 Film on Gallium Nitride LEDs

P-105: Advanced Furnace-Growing Technology to Fabricate Nanowire Type In2O3 Film on Gallium Nitride LEDs

We have developed the method on the enhanced light emission of semiconductors with nanowire type In2O3 films. The nanowire type In2O3 films is deposited by the furnace at low temperature and the radius is about 50 nm. Increasable intensity of GaN LEDs with nanowire type In2O3 film is more than sever...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2011-06, Vol.42 (1), p.1498-1500
Hauptverfasser: Lian, Jan-Tian, Tsao, Kai-Chieh, Chang, Yu-Ming, Su, Chun-Wei, Zeng, Jhao-Ming, Lai, Yi-Chun, Lin, Tai-Yuan
Format: Artikel
Sprache:eng
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Zusammenfassung:We have developed the method on the enhanced light emission of semiconductors with nanowire type In2O3 films. The nanowire type In2O3 films is deposited by the furnace at low temperature and the radius is about 50 nm. Increasable intensity of GaN LEDs with nanowire type In2O3 film is more than several fold.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3621140