76.2: Development of Highly Stable a-IGZO TFT with TiOx as a Passivation Layer for Active-Matrix Display

Titanium oxide (TiOx) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etchin...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.1132-1135
Hauptverfasser:	Seo, Hyun-Sik, Bae, Jong-Uk, Kim, Dae-Won, Ryoo, Chang II, Kang, Im-Kuk, Min, Soon-Young, Kim, Yong-Yub, Han, Joon-Soo, Kim, Chang-Dong, Hwang, Yong-Kee, Chung, In-Jae
Format:	Artikel
Sprache:	eng
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