33.4: An Improvement Process for Gate Oxide of LTPS TFT by Using N2O Plasma Nitridation

In this work, the nitridation effects for the gate oxide of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) by using N2O plasma were presented. According to the experiments and discussions in this paper, it was believed that the incorporation of nitrogen atoms into SiO2/Si interface was responsible for the improved quality of the oxide. Therefore we used N2O plasma instead of thermal and NH3 nitridation to get better performance of LTPS TFTs. Furthermore, the N2O plasma nitridation process also had advantages of the higher throughput and yield in LTPS TFTs fabrication.