Resistive switching characteristics of PECVD-deposited porous SiO2-based electrochemical metallisation memory cells

Porous silicon dioxide (SiO2) solid-electrolyte was prepared by the plasma enhanced chemical vapour deposition (PECVD) method using silane and oxygen as reactive gases. The resistive switching characteristics of the ∼280 nm-thick porous SiO2-based electrochemical metallisation memory cells were inve...

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Veröffentlicht in:	Electronics letters 2016-05, Vol.52 (11), p.965-966
1. Verfasser:	Zhou, Jumei
Format:	Artikel
Sprache:	eng
Schlagworte:	electrochemical devices electrochemical metallisation memory cells integrated memory circuits metallisation nanochannels nanogranular particles nanoparticles PECVD plasma CVD plasma enhanced chemical vapour deposition porous materials porous silicon dioxide solid‐electrolyte resistive switching characteristics retention performance SEM Semiconductor technology silicon compounds SiO2‐ITO switching TEM
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Zusammenfassung:	Porous silicon dioxide (SiO2) solid-electrolyte was prepared by the plasma enhanced chemical vapour deposition (PECVD) method using silane and oxygen as reactive gases. The resistive switching characteristics of the ∼280 nm-thick porous SiO2-based electrochemical metallisation memory cells were investigated. The SEM and TEM images showed that the PECVD-deposited SiO2 film was composed of nanogranular SiO2 particles with a plenty of nano-channels. The electrical measurements showed that the silver/porous SiO2/indium tin oxide vertical cells exhibited good resistive switching behaviours with low switching voltage (
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2015.4058