Heterozyklische Verbindungen mit fünfgliedrigen ESi4‐Ringen (E = Ga, In)

Heterocyclic Compounds Containing Five‐membered ESi4 Rings (E = Ga, In) Treatment of the dimeric indium(II) subhalide (In2R2Cl2)2 [R = C(SiMe3)3] possessing In‐In single bonds with the dipotassium tetrasilane dianion [K(18‐crown‐6)+]2[Si(SiMe3)2‐SiMe2‐SiMe2‐Si(SiMe3)2] (1) did not yield the corresponding six‐membered In2Si4 heterocycle by salt elimination. Instead cleavage of the In‐In bond occurred, and a compound containing a five‐membered InSi4 heterocycle (2) was isolated in a low yield. An ionic compound was formed with the indium atoms of the anions coordinated by two silicon and two chlorine atoms. The counterion [K2(18‐crown‐6)3]2+ contained two potassium atoms bridged by a crown ether molecule. Compound 2 and the corresponding gallium derivative 3 were obtained on a specific route by the reaction of the tetrasilane dianion with indium or gallium trichloride.