Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors (Small 29/2018)

In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electr...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-07, Vol.14 (29), p.n/a
Hauptverfasser: Zhao, Xiaoning, Wang, Zhongqiang, Xie, Yu, Xu, Haiyang, Zhu, Jiaxue, Zhang, Xintong, Liu, Weizhen, Yang, Guochun, Ma, Jiangang, Liu, Yichun
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container_issue 29
container_start_page
container_title Small (Weinheim an der Bergstrasse, Germany)
container_volume 14
creator Zhao, Xiaoning
Wang, Zhongqiang
Xie, Yu
Xu, Haiyang
Zhu, Jiaxue
Zhang, Xintong
Liu, Weizhen
Yang, Guochun
Ma, Jiangang
Liu, Yichun
description In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electrical FORMING process, improve the RS performance and help to maintain the flexibility of the memory devices.
doi_str_mv 10.1002/smll.201870136
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subjects graphene oxide
photocatalytic reduction
resistive switching
RGO‐domains
title Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors (Small 29/2018)
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