Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors (Small 29/2018)
In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electr...
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Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-07, Vol.14 (29), p.n/a |
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creator | Zhao, Xiaoning Wang, Zhongqiang Xie, Yu Xu, Haiyang Zhu, Jiaxue Zhang, Xintong Liu, Weizhen Yang, Guochun Ma, Jiangang Liu, Yichun |
description | In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electrical FORMING process, improve the RS performance and help to maintain the flexibility of the memory devices. |
doi_str_mv | 10.1002/smll.201870136 |
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subjects | graphene oxide photocatalytic reduction resistive switching RGO‐domains |
title | Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors (Small 29/2018) |
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