Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors (Small 29/2018)

Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors (Small 29/2018)

In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electr...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-07, Vol.14 (29), p.n/a
Hauptverfasser: Zhao, Xiaoning, Wang, Zhongqiang, Xie, Yu, Xu, Haiyang, Zhu, Jiaxue, Zhang, Xintong, Liu, Weizhen, Yang, Guochun, Ma, Jiangang, Liu, Yichun
Format: Artikel
Sprache:eng
Schlagworte:
graphene oxide
photocatalytic reduction
resistive switching
RGO‐domains
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Zusammenfassung:In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electrical FORMING process, improve the RS performance and help to maintain the flexibility of the memory devices.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201870136