Ambipolar Field‐Effect Transistor Based on CH3NH3PbI3 Microwires

Organic‐inorganic hybrid perovskites are promising semiconductors for high‐performance field‐effect transistors because of their excellent charge carrier transport, but hybrid perovskites used in field‐effect transistors are not diverse enough and the field‐effect performances are always not satisfactory at room temperature and in the dark and air. Herein, we prepared CH3NH3PbI3 microwires through a transformation from CH3NH3PbI3 bulk single crystals and fabricated ambipolar field‐effect transistors based on them. At room temperature and in the dark and air, the field‐effect mobility can reach to 1.8×10−3 cm2V−1 s−1, which is two orders of magnitude higher than that of CH3NH3PbI3 polycrystalline film based field‐effect transistors under the same condition, indicating that CH3NH3PbI3 microwires have potential for use in ambipolar transistors. CH3NH3PbI3 microwires were successfully prepared with a transformation procedure from CH3NH3PbI3 ⋅ H2O, further from bulk CH3NH3PbI3 single crystals. Based on the CH3NH3PbI3 microwires, prototype field‐effect transistors were fabricated and their ambipolar field‐effect characteristics were observed at room temperature and in the dark and air.