Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx
We investigated the band gap of ZnSe1‐xOx alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the d...
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Veröffentlicht in: | Physica status solidi. C 2012-02, Vol.9 (2), p.187-189 |
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creator | Chen, Wen-Yen Lai, Chi-Wen Cheng, Chao-Chia Chen, Cheng-Yu Chyi, Jen-Inn Hsu, Tzu-Min |
description | We investigated the band gap of ZnSe1‐xOx alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201100288</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>band anticrossing ; photomodulation ; ZnSeO band gap</subject><ispartof>Physica status solidi. C, 2012-02, Vol.9 (2), p.187-189</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. 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C</title><addtitle>Phys. Status Solidi C</addtitle><description>We investigated the band gap of ZnSe1‐xOx alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>band anticrossing</subject><subject>photomodulation</subject><subject>ZnSeO band gap</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo9kEtPAjEUhRujiYhuXfcPFPugr6UhikQiREg0bJoyvZXRYWYyHSL8e5lgWN3z5eS7i4PQPaMDRil_qFPKBpyyDoy5QD2mGCVMDfnlMRvFiRKSXaOblL4pFZIy1UOf803VVtsq7Arf5lWJG4gFZK0vM8Cp3YUDriJuYVtD49tdAzhADWWAru-aDeC1LwP-8nXHq3IBjOxn-1t0FX2R4O7_9tHy-Wk5eiHT2XgyepySnAtrSABrgtFraRgVNlhpFax5BkqZyJVUwVAtIlPaRsm0sFwb4HwYLRPKgxJ9ZE9vf_MCDq5u8q1vDo5R183guk3ceRM3XyxGZzq65OTmqYX92fXNj1NaaOk-3saOm9epnNt3txJ_vB5nJQ</recordid><startdate>201202</startdate><enddate>201202</enddate><creator>Chen, Wen-Yen</creator><creator>Lai, Chi-Wen</creator><creator>Cheng, Chao-Chia</creator><creator>Chen, Cheng-Yu</creator><creator>Chyi, Jen-Inn</creator><creator>Hsu, Tzu-Min</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope></search><sort><creationdate>201202</creationdate><title>Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx</title><author>Chen, Wen-Yen ; Lai, Chi-Wen ; Cheng, Chao-Chia ; Chen, Cheng-Yu ; Chyi, Jen-Inn ; Hsu, Tzu-Min</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2398-de98d87b581039d9596eb2ce668f2656d8073f1679f51739278e224f9136ae63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>band anticrossing</topic><topic>photomodulation</topic><topic>ZnSeO band gap</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Wen-Yen</creatorcontrib><creatorcontrib>Lai, Chi-Wen</creatorcontrib><creatorcontrib>Cheng, Chao-Chia</creatorcontrib><creatorcontrib>Chen, Cheng-Yu</creatorcontrib><creatorcontrib>Chyi, Jen-Inn</creatorcontrib><creatorcontrib>Hsu, Tzu-Min</creatorcontrib><collection>Istex</collection><jtitle>Physica status solidi. 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The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201100288</doi><tpages>3</tpages></addata></record> |
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subjects | band anticrossing photomodulation ZnSeO band gap |
title | Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx |
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