Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx

We investigated the band gap of ZnSe1‐xOx alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the d...

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Veröffentlicht in:Physica status solidi. C 2012-02, Vol.9 (2), p.187-189
Hauptverfasser: Chen, Wen-Yen, Lai, Chi-Wen, Cheng, Chao-Chia, Chen, Cheng-Yu, Chyi, Jen-Inn, Hsu, Tzu-Min
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container_title Physica status solidi. C
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creator Chen, Wen-Yen
Lai, Chi-Wen
Cheng, Chao-Chia
Chen, Cheng-Yu
Chyi, Jen-Inn
Hsu, Tzu-Min
description We investigated the band gap of ZnSe1‐xOx alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201100288
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subjects band anticrossing
photomodulation
ZnSeO band gap
title Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx
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