Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx

Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx

We investigated the band gap of ZnSe1‐xOx alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. C 2012-02, Vol.9 (2), p.187-189
Hauptverfasser: Chen, Wen-Yen, Lai, Chi-Wen, Cheng, Chao-Chia, Chen, Cheng-Yu, Chyi, Jen-Inn, Hsu, Tzu-Min
Format: Artikel
Sprache:eng
Schlagworte:
band anticrossing
photomodulation
ZnSeO band gap
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigated the band gap of ZnSe1‐xOx alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe1‐xOx exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201100288