Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films

The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS2 using dielectric spectroscopy are presented. Both dipole‐relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process Ea and conductivity Eσ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism. Herein, amorphous MoS2 films are studied using dielectric spectroscopy. The similarity of the obtained values of activation energy of conductivity (Eσ = [0.25 ± 0.01] eV) and the relaxation process (Ea = [0.21 ± 0.01] eV) leads to the conclusion that both processes have a common mechanism.