DLTS studies of low-t emperature annealing in lithium-d oped silicon

DLTS studies of annealing kinetics are carried out for 1 MeV electron irradiated lithium‐d oped silicon p‐n solar cells. The results obtained show that during low‐t emperature annealing Li atoms actively interact with radiation defects, transforming them into complexes with low recombination properties. New deep levels (Ec−0.36 eV) and (Ev0.30 eV), associated with lithium‐c ontaining complexes are observed. A multistage annealing model for annealing of radiation defects is proposed. An explanation of the annealing kinetics as well as the identification of the new deep levels is given on the base of the model. [Russian text ignored]