Mechanism of charge flow through the MGe3N4GaAs structure

Mechanism of charge flow through the MGe3N4GaAs structure

Current‐voltage (I–U) curves of the AlGe3N4GaAs strueture are studied depending on the heat treatment conditions. The mechanism of the charge flow through the metal‐insulator‐semiconductor (MIS) structure is revealed. The contact system parameters (barrier height, contact gap width and its transpa...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1981-06, Vol.65 (2), p.701-707
Hauptverfasser: Bagratishvili, G. D., Dzhanelidze, R. B., Jishiashvili, D. A., Piskanovskii, L. V., Zyuganov, A. N., Mikhelashvili, V. N., Smertenko, P. S.
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Sprache:eng
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Zusammenfassung:Current‐voltage (I–U) curves of the AlGe3N4GaAs strueture are studied depending on the heat treatment conditions. The mechanism of the charge flow through the metal‐insulator‐semiconductor (MIS) structure is revealed. The contact system parameters (barrier height, contact gap width and its transparency) are determined as well as the energy spectrum of the local states in Ge3N4 which restrict monopolar injection current. [Russian Text Ignored].
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.2210650237