Spatial distribution of channeled ions

An investigation is made of the dependence of distributions of implanted heavy ions, with the inclusion of the channeling effect, upon the initial ion energy, the thickness of the amorphous layer on the crystal surface, the direction of target irradiation, the target temperature, the angle of orient...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1981-05, Vol.65 (1), p.107-117
Hauptverfasser: Kumakhov, M. A., Muralev, V. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:An investigation is made of the dependence of distributions of implanted heavy ions, with the inclusion of the channeling effect, upon the initial ion energy, the thickness of the amorphous layer on the crystal surface, the direction of target irradiation, the target temperature, the angle of orientation of the ion beam with respect to the channel axis, the type of irradiating ions, and the radiation dose. Problems of capture of ions into channels are also considered. [Russian Text Ignored].
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.2210650112