The effect of thermal treatment on the electrical activity and mobility of dislocations in Si

It is shown that the starting stresses for dislocation glide and their electrical activity are determined by the temperature, dislocation velocity, and distance moved upon bringing them to the starting position and, also, on the sample cooling rate after deformation. A correlation between starting is stresses and dislocation donor center concentration is observed. It is shown that the result obtained is determined by the formation of complicated centers in the impurity atmospheres of both, mobile and immobile dislocations. [Russian Text Ignored].