One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022)

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022)

Low‐Power Memory Ferroelectric Si‐compatible hafnium oxide is attractive for emerging low‐power memory considering its voltage‐switchable electric polarization, exemplified in article number 2100499 by Suraj S. Cheema, Sayeef Salahuddin, and co‐workers by 1 nm ferroelectric tunnel junctions on Si th...

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Veröffentlicht in:Advanced electronic materials 2022-06, Vol.8 (6), p.n/a
Hauptverfasser: Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef
Format: Artikel
Sprache:eng
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Zusammenfassung:Low‐Power Memory Ferroelectric Si‐compatible hafnium oxide is attractive for emerging low‐power memory considering its voltage‐switchable electric polarization, exemplified in article number 2100499 by Suraj S. Cheema, Sayeef Salahuddin, and co‐workers by 1 nm ferroelectric tunnel junctions on Si that overcome a key traditional trade‐off: simulatenous ultrahigh read current and electroresistance.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202270025