2D Semiconductors: Interfacial Band Engineering of MoS2/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020)

In article number 202000110, Aleksandar Matković, Barbara Stadlober, and co‐workers resolve the issue of high contact resistances in bottom‐contact 2D semiconductor devices. A reduction of the contact resistance exceeding two orders of magnitude is achieved via a suitable self‐assembled‐monolayer treatment, vastly improving overall device performance. The asymmetric and bias‐dependent nature of contact resistances is revealed by Kelvin probe force microscopy measurements.