Biaxial Strain‐Mediated Room Temperature Ferromagnetism of ReS2 Web Buckles

Buckling‐driven delamination of thin films on rigid substrates is frequently observed, which leads to deterioration or failure of the film‐based devices. However, it is observed for the first‐time that web buckles could enhance room‐temperature ferromagnetism in PAD‐grown ReS2 thin films. Here, room...

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Veröffentlicht in:Advanced electronic materials 2019-12, Vol.5 (12), p.n/a
Hauptverfasser: Ren, Hongtao, Xiang, Gang, Lu, Jiating, Zhang, Xi, Zhang, Lei
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Sprache:eng
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Zusammenfassung:Buckling‐driven delamination of thin films on rigid substrates is frequently observed, which leads to deterioration or failure of the film‐based devices. However, it is observed for the first‐time that web buckles could enhance room‐temperature ferromagnetism in PAD‐grown ReS2 thin films. Here, room‐temperature ferromagnetic ReS2 thin films with web buckles are prepared by polymer‐assisted deposition (PAD) for the first time. The morphology and crystalline structure of the samples are characterized using optical, electron, atomic force microscopes and X‐ray photoelectron spectrometry. The relationship between the web buckle–induced strain and ferromagnetic properties is further explored by combing calculations based on density functional theory and experimental techniques including Raman spectroscopy, fluorescence spectroscopy, and superconducting quantum interference device (SQUID) magnetometry. The results reveal that the biaxial strain has a robust tuning effect on the room‐temperature ferromagnetism of ReS2 samples, suggesting that strain engineering could have significant applications in low‐dimensional spintronic devices. A novel strategy for tuning room‐temperature ferromagnetism of ReS2 samples via biaxial strain is demonstrated. The strain effect on the ferromagnetism in ReS2 thin films with web buckles is confirmed by both experimental and theoretical investigations, suggesting that strain engineering could have significant applications in low‐dimensional spintronic devices.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201900814