Multifunctional Mixed‐Dimensional MoS2–CuO Junction Field‐Effect Transistor for Logic Operation and Phototransistor

Mixed‐dimensional heterojunction based on 1D nanowires and 2D semiconductors attracts wide interests in constructing short‐channel transistors that overcome limits in 3D semiconductors, where the gate controllability generally suffers mutual interference in multiple gate operation, e.g., in logic circuit and phototransistors. Here, the dual‐gate modulated mixed‐dimensional junction field‐effect transistor (JFET) with an inverted gate‐all‐around configuration based on 2D n‐type MoS2 onto 1D p‐type CuO nanowire is reported. Importantly, the dual‐gate transistor is made free of gate interferences by introducing self‐aligned graphene nanoribbon that screens gate coupling. It is demonstrated that the devised heterojunction could offer stabilized operation in logic NAND circuit, and in photodetection with gate enhanced detectivity of over 1010 Jones from noise measurement and fast response within 5 ms. The results may therefore shed light on the advanced design of 1D–2D mixed‐dimensional JFETs for multifunction purposes. A novel structure of mixed‐dimensional junction field effect transistor is designed for dual‐gate modulation in function devices via a rectifying 1D‐CuO/2D‐MoS2 junction and a global back gate. With a self‐aligned graphene nanoribbon introduced, the device renders excellent device gate modulated operation window for logic circuits and photodetectors.