High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaOx Buffer Layer Grown on Low‐k SiO2 Gate Oxide

Efficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaOx buffer layer. This process allows for the fabrication of IGZO thin‐film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of hig...

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Veröffentlicht in:Advanced electronic materials 2017-03, Vol.3 (3), p.n/a
Hauptverfasser: Kang, Tae Sung, Yoon, Kap Soo, Baek, Gwang Ho, Ko, Won Bae, Yang, Seung Mo, Yeon, Bum Mo, Hong, Jin Pyo
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Sprache:eng
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Zusammenfassung:Efficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaOx buffer layer. This process allows for the fabrication of IGZO thin‐film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of high‐performance oxide‐based TFTs.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201600452