Strain-Controlled Responsiveness of Slave Half-Doped Manganite La0.5Sr0.5MnO3 Layers Inserted in BaTiO3 Ferroelectric Tunnel Junctions

Strain-Controlled Responsiveness of Slave Half-Doped Manganite La0.5Sr0.5MnO3 Layers Inserted in BaTiO3 Ferroelectric Tunnel Junctions

In ferroelectric BaTiO3 tunnel junctions, integrating tensile strained slave La0.5Sr0.5MnO3 (HD) layers, polarization reversal promotes an orbital‐reordering and a concomitant metal–insulator transition in the HD layer that largely enhances the electroresistance of the junctions. Radically different...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced electronic materials 2016-12, Vol.2 (12), p.n/a
Hauptverfasser: Radaelli, Greta, Gutiérrez, Diego, Qian, Mengdi, Fina, Ignasi, Sánchez, Florencio, Baldrati, Lorenzo, Heidler, Jakoba, Piamonteze, Cinthia, Bertacco, Riccardo, Fontcuberta, Josep
Format: Artikel
Sprache:eng
Schlagworte:
ferroelectric tunnel junctions
half-doped manganites
metal-insulator transitions
strain
tunnel electroresistance
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In ferroelectric BaTiO3 tunnel junctions, integrating tensile strained slave La0.5Sr0.5MnO3 (HD) layers, polarization reversal promotes an orbital‐reordering and a concomitant metal–insulator transition in the HD layer that largely enhances the electroresistance of the junctions. Radically different results are obtained under compressive strain.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201600368