Complementary Unipolar WS2 Field-Effect Transistors Using Fermi-Level Depinning Layers

Complementary Unipolar WS2 Field-Effect Transistors Using Fermi-Level Depinning Layers

High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field‐effect transistors (FETs). Unipolar behavior and reduced contact resistance are achieved for tungsten disulfide (WS2) FETs by using a TiO2 interfacial la...

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Veröffentlicht in:Advanced electronic materials 2016-02, Vol.2 (2), p.n/a
Hauptverfasser: Park, Woojin, Kim, Yonghun, Jung, Ukjin, Yang, Jin Ho, Cho, Chunhum, Kim, Yun Ji, Hasan, Syed Mohammad Najib, Kim, Hyun Gu, Lee, Han Bo Ram, Lee, Byoung Hun
Format: Artikel
Sprache:eng
Schlagworte:
contact resistance
Fermi-level pinning
field-effect transistors
interfacial layers
WS2
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Beschreibung
Zusammenfassung:High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field‐effect transistors (FETs). Unipolar behavior and reduced contact resistance are achieved for tungsten disulfide (WS2) FETs by using a TiO2 interfacial layer inserted between a metal layer and a WS2 layer.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201500278