Enhancement‐Mode Phototransistors Based on β‐Ga2O3 Microflakes Fabricated by Focused Ion Beams (Advanced Optical Materials 9/2024)
Enhancement‐Mode Phototransistors In article number 2302213, Huarong Yang, Hua Yu Feng, and co‐workers introduce focused ion beam (FIB) processing for the first time to etch and thin β‐Ga2O3 microflakes. Based on this method, with the help of O2 adsorption and interfacial charge (Qit) depletion mech...
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| Veröffentlicht in: | Advanced optical materials 2024-03, Vol.12 (9), p.n/a |
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| container_title | Advanced optical materials |
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| creator | Yang, Huarong Cheng, Tong‐Huai Ouyang, Huijia Xin, Qian Liu, Yiyuan Meng, Miao Yu Feng, Hua Luo, Feng Mu, Wenxiang Jia, Zhitai Tao, Xutang |
| description | Enhancement‐Mode Phototransistors
In article number 2302213, Huarong Yang, Hua Yu Feng, and co‐workers introduce focused ion beam (FIB) processing for the first time to etch and thin β‐Ga2O3 microflakes. Based on this method, with the help of O2 adsorption and interfacial charge (Qit) depletion mechanism, the transition from depletion mode to enhancement mode of β‐Ga2O3 phototransistor can be realized by controlling the thickness of the microflake. The enhancement‐mode phototransistor prepared using this method demonstrates excellent performance. |
| doi_str_mv | 10.1002/adom.202470029 |
| format | Article |
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In article number 2302213, Huarong Yang, Hua Yu Feng, and co‐workers introduce focused ion beam (FIB) processing for the first time to etch and thin β‐Ga2O3 microflakes. Based on this method, with the help of O2 adsorption and interfacial charge (Qit) depletion mechanism, the transition from depletion mode to enhancement mode of β‐Ga2O3 phototransistor can be realized by controlling the thickness of the microflake. The enhancement‐mode phototransistor prepared using this method demonstrates excellent performance.</description><subject>enhancement‐mode phototransistor</subject><subject>FIB etching</subject><subject>low‐dimensional</subject><subject>β‐Ga2O3 microflakes</subject><issn>2195-1071</issn><issn>2195-1071</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNpNkLtOwzAUhi0EElXpyuwRhrS-JHE8tqUtlRqFoXt0EjtqIImrOAV168bKs_AgPARPgiNQxXTOJ33noh-hW0rGlBA2AWXqMSPMF47kBRowKgOPEkEv__XXaGTtMyHEAZe-GKD3RbODJte1brrv00dslMZPO9OZroXGlrYzrcUzsFph0-CvT-esgCUcx2XemqKCF23xErK2zKFzUnbES5Mfen_tBmYaaovvpuq1P6Jwsu-cWOHYyW0JlcVy0n99f4OuCod69FeHaLtcbOeP3iZZrefTjXeQRHqc59IPJISRJhmjgYpEGBaMEsiJLyQVEAkmeMi1ygoVgiKM-yAKTcIgoFHAh0j-rn0rK31M921ZQ3tMKUn7FNM-xfScYjp9SOIz8R8xKGor</recordid><startdate>20240322</startdate><enddate>20240322</enddate><creator>Yang, Huarong</creator><creator>Cheng, Tong‐Huai</creator><creator>Ouyang, Huijia</creator><creator>Xin, Qian</creator><creator>Liu, Yiyuan</creator><creator>Meng, Miao</creator><creator>Yu Feng, Hua</creator><creator>Luo, Feng</creator><creator>Mu, Wenxiang</creator><creator>Jia, Zhitai</creator><creator>Tao, Xutang</creator><scope/></search><sort><creationdate>20240322</creationdate><title>Enhancement‐Mode Phototransistors Based on β‐Ga2O3 Microflakes Fabricated by Focused Ion Beams (Advanced Optical Materials 9/2024)</title><author>Yang, Huarong ; Cheng, Tong‐Huai ; Ouyang, Huijia ; Xin, Qian ; Liu, Yiyuan ; Meng, Miao ; Yu Feng, Hua ; Luo, Feng ; Mu, Wenxiang ; Jia, Zhitai ; Tao, Xutang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-u909-33c9459a68e0b215d8766f210ac047917a8727363edbfd6ad0234a7fe06551853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>enhancement‐mode phototransistor</topic><topic>FIB etching</topic><topic>low‐dimensional</topic><topic>β‐Ga2O3 microflakes</topic><toplevel>online_resources</toplevel><creatorcontrib>Yang, Huarong</creatorcontrib><creatorcontrib>Cheng, Tong‐Huai</creatorcontrib><creatorcontrib>Ouyang, Huijia</creatorcontrib><creatorcontrib>Xin, Qian</creatorcontrib><creatorcontrib>Liu, Yiyuan</creatorcontrib><creatorcontrib>Meng, Miao</creatorcontrib><creatorcontrib>Yu Feng, Hua</creatorcontrib><creatorcontrib>Luo, Feng</creatorcontrib><creatorcontrib>Mu, Wenxiang</creatorcontrib><creatorcontrib>Jia, Zhitai</creatorcontrib><creatorcontrib>Tao, Xutang</creatorcontrib><jtitle>Advanced optical materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Huarong</au><au>Cheng, Tong‐Huai</au><au>Ouyang, Huijia</au><au>Xin, Qian</au><au>Liu, Yiyuan</au><au>Meng, Miao</au><au>Yu Feng, Hua</au><au>Luo, Feng</au><au>Mu, Wenxiang</au><au>Jia, Zhitai</au><au>Tao, Xutang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement‐Mode Phototransistors Based on β‐Ga2O3 Microflakes Fabricated by Focused Ion Beams (Advanced Optical Materials 9/2024)</atitle><jtitle>Advanced optical materials</jtitle><date>2024-03-22</date><risdate>2024</risdate><volume>12</volume><issue>9</issue><epage>n/a</epage><issn>2195-1071</issn><eissn>2195-1071</eissn><abstract>Enhancement‐Mode Phototransistors
In article number 2302213, Huarong Yang, Hua Yu Feng, and co‐workers introduce focused ion beam (FIB) processing for the first time to etch and thin β‐Ga2O3 microflakes. Based on this method, with the help of O2 adsorption and interfacial charge (Qit) depletion mechanism, the transition from depletion mode to enhancement mode of β‐Ga2O3 phototransistor can be realized by controlling the thickness of the microflake. The enhancement‐mode phototransistor prepared using this method demonstrates excellent performance.</abstract><doi>10.1002/adom.202470029</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | enhancement‐mode phototransistor FIB etching low‐dimensional β‐Ga2O3 microflakes |
| title | Enhancement‐Mode Phototransistors Based on β‐Ga2O3 Microflakes Fabricated by Focused Ion Beams (Advanced Optical Materials 9/2024) |
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