Enhancement‐Mode Phototransistors Based on β‐Ga2O3 Microflakes Fabricated by Focused Ion Beams (Advanced Optical Materials 9/2024)

Enhancement‐Mode Phototransistors In article number 2302213, Huarong Yang, Hua Yu Feng, and co‐workers introduce focused ion beam (FIB) processing for the first time to etch and thin β‐Ga2O3 microflakes. Based on this method, with the help of O2 adsorption and interfacial charge (Qit) depletion mechanism, the transition from depletion mode to enhancement mode of β‐Ga2O3 phototransistor can be realized by controlling the thickness of the microflake. The enhancement‐mode phototransistor prepared using this method demonstrates excellent performance.