Fabrication of a Periodic Inverse Micropyramid (PIMP)‐Si/In2Se3 Heterojunction Photodetector Array for RGB‐IR Image Sensing Application

Here, the fabrication of an addressable 8 × 8 photodetector array is reported by combining In2Se3 nanofilm with periodic inverse micropyramid‐Si (PIMP‐Si), which is obtained through colloidal lithography and anisotropic wet etching. Due to the unique configuration and the outstanding light trapping effect, the as‐fabricated heterojunction device presents an excellent self‐powered photoresponse over the broadband wavelength range from 265 to 1300 nm, with a peak sensitivity at ≈810 nm. The responsivity, specific detectivity, and rise/fall time are estimated to be 0.58 A W−1, 1.76 × 1012 Jones, and 5.1/18 µs, respectively, which are competitive in comparison with other devices with similar geometries. Meanwhile, the photodetector array displays a satisfactory pixel‐to‐pixel uniformity, which allows the device to record the full‐color image of “HFUT” with satisfying resolution, revealing the potential application of the PIMP‐Si/In2Se3 heterojunction photodetector array for real‐time red‐green‐blue‐infrared image sensing and video capturing. The addressable 8 × 8 periodic inverse micropyramid‐Si/In2Se3 heterojunction photodetector array presents an excellent self‐powered photoresponse over the broadband wavelength range (265–1300 nm) with a satisfactory pixel‐to‐pixel uniformity. Full‐color imaging as well as near infrared imaging with reasonable spatial resolution are realized, revealing the potential application for real‐time red‐green‐blue‐infrared image sensing and video capture.