Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

Solution‐processed mechanically flexible resistive random access memories are fabricated using Ag2Se nanoparticles; the fabricated Ag/Ag2Se/Au memory devices on flexible poly‐ethylene‐naphthalate substrates show bipolar switching memory characteristics, with low voltage (

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Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2012-07, Vol.24 (26), p.3573-3576
Hauptverfasser: Jang, Jaewon, Pan, Feng, Braam, Kyle, Subramanian, Vivek
Format: Artikel
Sprache:eng
Schlagworte:
Ag2Se nanoparticles
flexible electronics
non-volatile memory
resistance switching
solution process
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Beschreibung
Zusammenfassung:Solution‐processed mechanically flexible resistive random access memories are fabricated using Ag2Se nanoparticles; the fabricated Ag/Ag2Se/Au memory devices on flexible poly‐ethylene‐naphthalate substrates show bipolar switching memory characteristics, with low voltage (
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201200671