Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator

A reproducible and steady magnetoresistance switch effect of Sn‐doped Bi2Te3 topological insulator films with a Pt/Sn‐doped Bi2Te3/Pt structure is observed when a parallel magnetic field is applied.

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Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Weinheim) 2012-01, Vol.24 (1), p.132-136
Hauptverfasser:	Zhang, Hong Bin, Yu, Hai Lin, Bao, Ding Hua, Li, Shu Wei, Wang, Cheng Xin, Yang, Guo Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	mangetoresistance switch effects topological insulators
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A reproducible and steady magnetoresistance switch effect of Sn‐doped Bi2Te3 topological insulator films with a Pt/Sn‐doped Bi2Te3/Pt structure is observed when a parallel magnetic field is applied.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201103530