Tunable and Predetermined Bandgap Emissions in Alloyed ZnSxSe1–x Nanowires
Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1–x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1–x nanowires with the correspondi...
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Veröffentlicht in: | Advanced materials (Weinheim) 2007-12, Vol.19 (24), p.4491-4494 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1–x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1–x nanowires with the corresponding composition x. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.200602919 |