Tunable and Predetermined Bandgap Emissions in Alloyed ZnSxSe1–x Nanowires

Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1–x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1–x nanowires with the correspondi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2007-12, Vol.19 (24), p.4491-4494
Hauptverfasser: Wang, M., Fei, G. T., Zhang, Y. G., Kong, M. G., Zhang, L. D.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1–x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1–x nanowires with the corresponding composition x.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200602919