Wide‐Bandgap Perovskite‐Inspired Materials: Defect‐Driven Challenges for High‐Performance Optoelectronics (Adv. Funct. Mater. 50/2024)

Wide‐Bandgap Perovskite‐Inspired Materials: Defect‐Driven Challenges for High‐Performance Optoelectronics (Adv. Funct. Mater. 50/2024)

Wide‐Bandgap Perovskite‐Inspired Materials In article number 2307441, Paola Vivo and co‐workers discuss perovskite‐inspired materials (PIMs), a low‐toxicity alternative to lead halide perovskites, which are characterized by a high concentration of defects within their wide bandgaps, which limits the...

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Veröffentlicht in:Advanced functional materials 2024-12, Vol.34 (50), p.n/a
Hauptverfasser: Grandhi, G. Krishnamurthy, Hardy, David, Krishnaiah, Mokurala, Vargas, Brenda, Al‐Anesi, Basheer, Suryawanshi, Mahesh P., Solis‐Ibarra, Diego, Gao, Feng, Hoye, Robert L. Z., Vivo, Paola
Format: Artikel
Sprache:eng
Schlagworte:
defect chemistry
low‐toxicity
optoelectronics
perovskite‐inspired materials
photovoltaics
wide bandgap
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Zusammenfassung:Wide‐Bandgap Perovskite‐Inspired Materials In article number 2307441, Paola Vivo and co‐workers discuss perovskite‐inspired materials (PIMs), a low‐toxicity alternative to lead halide perovskites, which are characterized by a high concentration of defects within their wide bandgaps, which limits their performance in optoelectronic devices. Understanding the complex defect chemistry of PIMs is essential for healing and mitigating these defects. This, in turn, will enhance the potential of PIM‐based semiconductors for commercialization.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202470295