A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform

A novel composite barrier layer with back-to-back graded AlGaN in a GaN/AlGaN/GaN epitaxial structure for high performance n- and p-channel devices on the same platform is proposed. By adjusting the relative thicknesses of the two graded layers, we obtain a spread in the width and concentration of carriers in the 3D slabs. The best barrier amongst those studied, enhances the on-current (ION) by 24.4% in low voltage n-channel devices, 32.2% the p-channel devices whereas the figure of merit of the power device is higher by 3 times, in comparison to the conventional platform.