Validating S-parameter measurements of RF integrated circuits at milli-Kelvin temperatures

Techniques to precisely characterise RF components at milli-Kelvin temperatures support the development of quantum computing systems utilising these components. In this work, an S-parameter measurement setup to characterise RF integrated circuits at milli-Kelvin temperatures has been proposed and for the first time, the S-parameter measurements at milli-Kelvin temperatures have been validated using two independent calibration techniques, thereby providing more confidence in measurements. The techniques are demonstrated experimentally by comparing and validating calibrated S-parameter measurements of a cryogenic attenuator integrated circuits at milli-Kelvin temperatures.