Atomistic processes of surface segregation during SiGe MBE growth

Atomic-scale segregation at step edges during growth is proposed as the origin of ordering in the SiGe system. Cross-sectional Z-contrast imaging of as-grown structures reveals that a variety of ordered phase variants can exist at Si on Ge interfaces as a result of vertical segregation during super...

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Veröffentlicht in:	Thin solid films 1992-12, Vol.222 (1), p.98-103
Hauptverfasser:	Jesson, D.E., Pennycook, S.J., Baribeau, J.-M., Houghton, D.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Materials Science Materials Science, Coatings & Films Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Technology Thin film structure and morphology
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Zusammenfassung:	Atomic-scale segregation at step edges during growth is proposed as the origin of ordering in the SiGe system. Cross-sectional Z-contrast imaging of as-grown structures reveals that a variety of ordered phase variants can exist at Si on Ge interfaces as a result of vertical segregation during superlattice growth. Long-range ordering in alloys is predicted to arise due to segregation at monolayer or bilayer steps depending on the evolving surface morphology.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(92)90046-E