Dark-line-resistant, aluminum-free diode laser at 0.8 mu m

Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mu m are shown to exhibit resistance to

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 1992-12, Vol.4 (12), p.1328-1330
Hauptverfasser:	Yellen, S.L., Shepard, A.H., Harding, C.M., Baumann, J.A., Waters, R.G., Garbuzov, D.Z., Pjataev, V., Kochergin, V., Zory, P.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conducting materials Diode lasers Engineering Engineering, Electrical & Electronic Epitaxial growth Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Indium gallium arsenide Lasers Optical materials Optics Photonic band gap Physical Sciences Physics Physics, Applied Quantum well lasers Science & Technology Semiconductor laser arrays Semiconductor lasers laser diodes Substrates Technology
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Beschreibung
Zusammenfassung:	Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mu m are shown to exhibit resistance to
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.180565