144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES

144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES

We report lasing at temperatures as high as 144-degrees-C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1992-12, Vol.61 (26), p.3095-3097
Hauptverfasser: DUDLEY, JJ, ISHIKAWA, M, BABIC, DI, MILLER, BI, MIRIN, R, JIANG, WB, BOWERS, JE, HU, EL
Format: Artikel
Sprache:eng
Schlagworte:
Physical Sciences
Physics
Physics, Applied
Science & Technology
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report lasing at temperatures as high as 144-degrees-C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at room temperature to 81 K at temperatures above 80-degrees-C as the gain peak moves into resonance with the longer wavelength cavity mode.
ISSN:0003-6951
DOI:10.1063/1.107972