RAPID-THERMAL-OXIDIZED POROUS SI - THE SUPERIOR PHOTOLUMINESCENT SI

To improve the stability of porous Si (PS) prepared by electrochemical etching, we make use of rapid-thermal oxidation (RTO). During RTO processing, the hydride coverage of the internal surfaces of the pores is replaced by a high-quality oxide while retaining nm-sized Si grains. With increasing proc...

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Veröffentlicht in:	Applied physics letters 1992-08, Vol.61 (8), p.943-945
Hauptverfasser:	PETROVAKOCH, MUSCHIK, T, KUX, A, MEYER, BK, KOCH, F, LEHMANN
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physical Sciences Physics Physics, Applied Science & Technology
Online-Zugang:	Volltext
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Zusammenfassung:	To improve the stability of porous Si (PS) prepared by electrochemical etching, we make use of rapid-thermal oxidation (RTO). During RTO processing, the hydride coverage of the internal surfaces of the pores is replaced by a high-quality oxide while retaining nm-sized Si grains. With increasing process temperature T(ox) the luminescence is first quenched. It is recovered with comparable intensity for T(ox) greater-than-or-equal-to 700-degrees-C.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.107736