ON THE CORRELATION OF IMPLANTATION DEFECTS AND IMPLANTED SPECIES

Using high-sensitive deep level transient spectroscopy (DLTS), we have determined ion-related defects in monocrystalline silicon in the as-implanted state. In comparison with secondary ion mass spectrometry (SIMS) data and neutron depth profiling (NDP) results it is demonstrated that the defect profiles and the chemical distributions have nearly identical shape. From these experimental facts it can be concluded that this electrical spectroscopy can be applied for the detection of very low concentrations (down to 10(10) cm-3) of implanted ion species.