Modulation Linearity Characterization of Si Ring Modulators

Modulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree we...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of lightwave technology 2021-12, Vol.39 (24), p.7842-7849
Hauptverfasser: Jo, Youngkwan, Mai, Christian, Lischke, Stefan, Zimmermann, Lars, Choi, Woo-Young
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Modulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2021.3093463