Measurement of dense plasma temperature of the shock‐compressed silicon

Measurements of the brightness temperature and compressibility of a dense silicon plasma formed by powerful shock waves (SWs) passing through a single‐crystal sample have been carried out. Plane SWs were created using an explosive technique: the traditional plane acceleration of a steel driver plate made it possible to obtain pressures in silicon up to 133 GPa, and the use of “Mach” cumulative generators realized the pressures up to 510 GPa. The shock Hugoniot of silicon was determined by the impedance matching with α‐quartz as the reference. The intensity of emitted thermal radiation was measured in the infrared range λ ∼ 1.5 μm, where silicon is optically transparent, and in the visible range of the spectrum. A significant (up to five times) understatement of the measured values of the brightness temperature in comparison with the values calculated by the equation of state was found. Taking into account the reflective properties of the SW in silicon does not lead to an agreement with the experiment. The estimates of relaxation processes behind the shock front suggest the presence of a zone of the establishment of ionization equilibrium with a width of ∼10 μm.