A comparative study on electrical characteristics of Ni/n-Si and Ni/p-Si Schottky diodes with Pinus Sylvestris Resin interfacial layer in dark and under illumination at room temperature

In this study, we evaluated the potential use of the Pinus Sylvestris Resin (PSR) organic material in the metal/interface layer/semiconductor Schottky diode (SD) structure as an interface layer. For this purpose, PSR/n-Si and PSR/p-Si device configurations were prepared by applying PSR on the n and p-type Si wafers by spin coating method, and current-voltage (I–V) and capacitance-voltage (C–V) characteristics were examined. In order to understand the photoresponse features of the PSR/Si SDs, the I–V characteristics of the devices were investigated in dark and under various illumination intensities. It is seen that fabricated devices exhibited strong photodiode characteristics to the increasing light intensity. Furthermore, the surface morphology, thickness, and chemical composition of the PSR film on Si wafer were determined by SEM/EDS measurements. Also, several parameters, such as ideality factor, saturation current, built-in voltage, carrier concentration, Fermi level, and barrier height, were extracted from the electrical measurements. The obtained results reveal that the prepared devices can be used as an efficient material for applications in optoelectronic applications such as solar cells, photodiode and photodetector. •The potential use of the Pine Resin organic material in the metal/interface layer/semiconductor Schottky diode (SD) structure was examined.•The use of Pine Resin material as interfacial layer was presented for the first time in the literature.•The surface morphology and chemical composition of the interlayer material was examined by using SEM-EDS analysis.•The main junction parameters of the Pine Resin/n-Si (and p-Si) SDs were calculated by using different methods, in dark and under illumination.